KDR729 반도체 회로 부품 판매점
SCHOTTKY BARRIER TYPE DIODE
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(4)=0.43V(Typ.)
IO=200mA rectification possible.
Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
VRM
VR
IFM
IO
IFSM
PD
30
30
300
200
1
200*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR729
SCHOTTKY BARRIER TYPE DIODE
B
1
2
D
MM
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A 2.50+_ 0.2
B 1.25+_ 0.05
C 0.90+_ 0.05
D 0.30 +_ 0.06
E 1.70 +_ 0.05
F 0.27 +_ 0.10
G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15+_ 0.05
K 0.4
L 2 +4/-2
M 4~6
USC
Marking
UM
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
VF(1)
Forward Voltage
Reverse Current
VF(2)
VF(3)
VF(4)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
IF=200mA
VR=30V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
-
TYP.
0.22
0.29
0.38
0.43
-
50
MAX.
-
-
-
0.55
50
-
UNIT
V
A
pF
2014. 3. 31
Revision No : 7
1/2
KDR729
I F - VF
3
10
Ta=85 C
2
10
Ta=50 C
Ta=25 C
10
Ta=-25 C
Ta=-40 C
1
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE VF (V)
I R - VR
10
Ta=25 C
5
1
0.5
0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
C T - VR
100
Ta=25 C
f=1MHz
50
10
5
0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
2014. 3. 31
Revision No : 7
2/2
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: KEC
( kec )
KDR729 diode
데이터시트 다운로드 :
[ KDR729.PDF ]
[ KDR729 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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