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SOD-523 Plastic-Encapsulate Diodes



WILLAS 로고
WILLAS
BAS516T1 데이터시트, 핀배열, 회로
WILLAS
SOD-523 Plastic-Encapsulate Diodes
BAS516T1
FAST SWITCHING DIODE
SOD-523
FEATURES
z Small Package
z Low Reverse Current
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
z Pb free product for packing code suffix "G",
Halogen free product for packing code suffix "H"
z Moisture Sensitivity Level 1
MARKING: 61 or 6
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VRM Non-Repetitive Peak Reverse Voltage
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR(RMS)
RMS Reverse Voltage
IO Average Rectified Output Current
Peak Forward Surge Current @t=1μs
IFSM
Peak Forward Surge Current @t=1s
PD Power Dissipation
RΘJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Operating/Storage Temperature
Value
100
75
53
250
4
0.5
200
625
150
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current =IR VR 25V
=VR 75V
=IF 1mA
=IF 10mA
Forward voltage
VF
=IF 50mA
=IF 150mA
Total capacitance
==Ctot VR 0V,f 1MHz
Reverse recovery time
trr IF= IR =10mA, Irr=0.1*IR,RL=100Ω
Min
75
Unit
V
V
V
mA
A
A
mW
/W
Typ Max
30
1
0.715
0.855
1
1.25
1
4
Unit
V
nA
μA
V
V
V
V
pF
ns
2013-06
WILLAS ELECTRONIC CORP.


BAS516T1 데이터시트, 핀배열, 회로
WILLAS
SOD-523 Plastic-Encapsulate Diodes
BAS516T1
Typical Characteristics
Forward Characteristics
250
100
Reverse Characteristics
10000
1000
Ta=100
10
100
1
Ta=25
10
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0
25 50
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
75
Capacitance Characteristics
1.1
Ta=25
f=1MHz
1.0
0.9
0.8
0.7
0
5 10 15 20
REVERSE VOLTAGE VR (V)
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ()
2013-06
WILLAS ELECTRONIC CORP.




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BAS516T1

SOD-523 Plastic-Encapsulate Diodes - WILLAS