(PDF) KDV240E Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV240E
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA ANTENNA TUNNING APPLICATION FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min.) Excellent C-V Characteristics, and Small Tracking Error. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 10 125 -55 125 UNIT V KDV240E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Marking Type Name TL ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio IR C0.5V C1.5V C3V C0.5V/C3V Series Resistance rS TEST CONDITION VR=22V VR=0.5V, f=1MHz VR=1.5V, f=1MHz VR=3V, f=1MHz - VR=0.5V, f=470MHz MIN. - 3.8 2.1 1.1 2.6 - TYP. - - - - - - MAX. 10 5.0 2.7 1.3 - 1.5 UNIT nA pF - 2007. 6. 11 Revision No : 0 1/2 1 page

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PDF KDV240E Data sheet ( Hoja de datos )