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KEC |
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio
Low Series Resistance
KDV270E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CE
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
32
125
-55 125
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
V4
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
IR
C1V
C2V
C25V
C28V
C1V/C28V
C1V/C2V
C25V/C28V
VR=32V
VR=1V, f=1MHz
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=28V, f=1MHz
-
-
-
Series Resistance
rs VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
(VR=1~28V)
2014. 3. 31
Revision No : 1
MIN.
-
39.0
-
-
2.30
15.7
1.25
1.06
-
TYP.
-
-
31.5
2.73
-
16.0
-
1.08
-
MAX.
10
43.0
-
-
2.60
-
-
-
0.85
UNIT
nA
pF
pF
pF
pF
-
-
-
1/2
KDV270E
CT - VR
100
Ta=25 C
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
rS - VR
Ta=25 C
f=470MHz
5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
IR - VR
100
Ta=25 C
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
2014. 3. 31
Revision No : 1
2/2
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