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KDV804S 반도체 회로 부품 판매점

SILICON EPITAXIAL PLANAR DIODE



KEC 로고
KEC
KDV804S 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES
Low Series Resistance : rs=0.3(TYP.).
Small Package : SOT-23.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE(C2V)
UNIT
A 42 43.5
B 43 44.5
C
44 45.5
pF
D 45 46.5
E 46 47.5
Marking
Grade
K3Type Name
Lot No.
KDV804M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
HM
C
EE
1 2 3N
L
1. ANODE 1
2. CATHODE 1, 2
3. ANODE 2
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
1 23
TO-92M
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. ANODE 1
2. ANODE 2
3. CATHODE
3
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
VR
IR
C2V
C8V
Capacitance Ratio
C2V/C8V
Series Resistance
rS
TEST CONDITION
IR=10 A
VR=15V
VR=2V, f=1MHz
VR=8V, f=1MHz
C=38pF, f=100MHz
1998. 6. 15
Revision No : 1
SOT-23
MIN.
15
-
42
24
1.65
-
TYP.
-
-
-
-
-
0.3
MAX.
-
50
47.5
28.8
1.8
0.4
UNIT
V
nA
pF
1/2


KDV804S 데이터시트, 핀배열, 회로
KDV804M/S
C - VR
100
f=1MHz
Ta=25 C
50
30
10
5
1
35
10
REVERSE VOLTAGE VR (V)
30
Q - VR
1k
500
300
100
50
1
f=50MHz
Ta=25 C
35
10
REVERSE VOLTAGE VR (V)
30
1998. 6. 15
Revision No : 1
2/2




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KDV804S diode

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