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KEC |
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Junction Temperature
Storage Temperature
SYMBOL
PPK
IPP
Tj
Tstg
RATING
60
6.7
-55 150
-55 150
UNIT
W
A
PG05EAESM
TVS Diode for ESD
Protection in Portable Electronics
E
B
2
13
DIM MILLIMETERS
A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. (TVS) D1 CATHODE
2. (TVS) D2 CATHODE
3. COMMON ANODE
ESM
Marking
Type Name
D4
3
D2 D1
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRWM
VBR
IR
VC(1)
VC(2)
Junction Capacitance
CJ
TEST CONDITION
-
It=5mA
VRWM=4.5V
IPP=1A, tP=8/20
IPP=5A, tP=8/20
VR=0V, f=1MHz
MIN.
-
6.46
-
-
-
-
TYP.
-
-
-
-
-
33
MAX.
5
7.14
1
12
17
40
UNIT
V
V
A
V
V
pF
2007. 5. 11
Revision No : 2
1/2
PG05EAESM
NON-REPETITIVE PEAK PULSE
POWER VS. PULSE TIME
1K
100
10
1 10 100
PULSE DURATION tP (µs)
110
100
90
80
70
60
50
40
30
20
10
0
0
PULSE WAVEFORM
Waveform
Parameters :
tr=8µs
td=20µs
e -t
td=lpp/2
5 10 15 20 25 30
TIME (µs)
POWER DERATION CURVE
110
100
90
80
70
60
50
40
30
20
10
0
0
Peak Pulse Power
8/20us
Average Power
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
CJ - VR
40
35
30
25
20
15
10
5
0
0 1234
REVERSE VOLTAGE VR (V)
5
2007. 5. 11
Revision No : 2
2/2
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