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PDF PG05DXTET Data sheet ( Hoja de datos )
| Número de pieza | PG05DXTET | |
| Descripción | TVS Diode | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
30 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
PG05DXTET
TVS Diode for ESD
Protection in Portable Electronics
B
B1
15
DIM MILLIMETERS
A 1.6 +_ 0.05
2 A1 1.0+_ 0.05
B 1.6+_ 0.05
B1 1.2+_ 0.05
34
C 0.50
D 0.2+_ 0.05
P
H 0.5+_ 0.05
P J 0.12+_ 0.05
P5
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
PPK
Tj
Tstg
RATING
30
150
-55 150
UNIT
W
1. NC
2. COMMON ANODE
3. (TVS) D1 CATHODE
4. (TVS) D2 CATHODE
5. (TVS) D3 CATHODE
TESV
Marking
5
4
Type Name
TF
Lot No.
123
D3 D2
D1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=4.3V
VR=0V, f=1MHz
MIN.
-
6.47
-
-
TYP.
-
-
-
12
MAX.
5
7.14
1
15
UNIT
V
V
A
pF
2008. 9. 10
Revision No : 3
1/2
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| PDF Descargar | [ Datasheet PG05DXTET.PDF ] | |
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