|
KEC |
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
150 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to IEC 61000-4-2(ESD)
15kV(Air), 8kV(Contact).
Protects five I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in portable electronics.
APPLICATIONS
Cell phone handsets and accessories.
Cordless phones.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Set-Top Box, DVD Player.
Digital Camera.
PG03GXTE6
TVS Diode Array for ESD
Protection in Portable Electronics
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. D1
2. COMMON ANODE
3. D2
4. D3
5. D4
6. D5
TES6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
PPK
IPP
Tj
Tstg
RATING
150
15
-55 150
-55 150
UNIT
W
A
Marking
65
4
Type Name
3X
12
65
D5 D4
3
4
D3
D1 D2
123
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
VRWM
VBR
IR
VC
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=3.3V
IPP=15A, tp=8/20 s
VR=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
4.2
-
TYP.
-
-
-
MAX.
3.3
-
30
10.9
UNIT
V
V
A
- - 120 pF
2008. 9. 10
Revision No : 2
1/2
PG03GXTE6
NON-REPETITIVE PEAK PULSE
POWER VS. PULSE TIME
1K
100
10
1
10
PULSE DURATION tp (µs)
100
110
100
90
80
70
60
50
40
30
20
10
0
0
PULSE WAVEFORM
Waveform
Parameters :
tr=8µs
td=20µs
e -t
td=lpp/2
5 10 15 20 25 30
TIME (µs)
110
100
90
80
70
60
50
40
30
20
10
0
0
POWER DERATION CURVE
Peak Pulse Power
8/20us
Average Power
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
2008. 9. 10
Revision No : 2
2/2
|