(PDF) KDR322 Datasheet - SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE

Número de pieza	KDR322
Descripción	SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.54V (Typ.). Low Reverse Current : IR=5 A (Max.). Small Package : USM. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO PD Tj Tstg RATING 45 40 300 100 100 125 -55 125 UNIT V V mA mA mW KDR322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE E MB M 2 13 NK N 1. N.C 2. ANODE 3. CATHODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN 3 21 USM Marking Type Name UL Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF (1) VF (2) VF (3) IR Total Capacitance CT TEST CONDITION IF=1mA IF=10mA IF=100mA VR=40V VR=0, f=1MHz MIN. - - - - - TYP. 0.28 0.36 0.54 - 18 MAX. - - 0.60 5 25 UNIT V A pF 2008. 9. 8 Revision No : 3 1/2 1 page

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PDF KDR322 Data sheet ( Hoja de datos )