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Infineon |
Silicon Tuning Diodes
• High capacitance ratio
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• Very low capacitance spread
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BBY66...
BBY66-02V
BBY66-05
BBY66-05W
!
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Type
BBY66-02V
BBY66-05
BBY66-05W
Package
SC79
SOT23
SOT323
Configuration
single
common cathode
common cathode
**For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH)
0.6
1.8
1.4
Marking
h
O1s / O2s**
OBs
Value
12
50
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2007-04-20
BBY66...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V
VR = 10 V, TA = 65 °C
IR nA
- - 20
- - 200
AC Characteristics
Diode capacitance1)
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4.5 V, f = 1 MHz
CT pF
66 68.7 71.5
33 35.4 38
19.7 20.95 22.2
12 12.7 13.5
Capacitance ratio
CT1/CT4.5
VR = 1 V, VR = 4.5 V
Series resistance
VR = 1 V, f = 470 MHz
rS
1Capacitance groups at 1V, coded 01; 02 (only BBY66-05)
CT/groups
01 02
C1V min
66pF 68.5pF
C1V max
69pF 71.5pF
Deliveries contain either CT group 01 or group 02 (marked on reel).
No direct order of CT groups possible
5 5.41 -
- 0.25 0.4 Ω
2 2007-04-20
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