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Infineon |
Silicon Tuning Diode
• Excellent linearity
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• Very low capacitance spread
• Pb-free (RoHS compliant) package
BBY56...
BBY56-02V
BBY56-02W
BBY56-03W
Type
BBY56-02V
BBY56-02W*
BBY56-03W
* Not for new design
Package
SC79
SCD80
SOD323
Configuration
single
single
single
Marking
9
66
red 6
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
TStg
Value
10
20
-55 ...150
-55 ...150
Unit
V
mA
°C
1 2014-02-11
BBY56...
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V
VR = 6 V, TA = 85 °C
IR
- -5
- - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
37 40 43
22 - 25
14.8 15.8 16.8
- 12.1
-
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
VR = 1 V, VR = 4 V, f = 1 MHz
CT1/CT3
2.15
-
2.53
3.3
-
-
Series resistance
VR = 1 V, f = 470 MHz
rS
- 0.25
-
Unit
nA
pF
Ω
2 2014-02-11
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