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Infineon |
Silicon Tuning Diodes
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• Very low capacitance spread
• Pb-free (RoHS compliant) package
BBY55...
BBY55-02V
BBY55-02W
BBY55-03W
Type
BBY55-02V
BBY55-02W
BBY55-03W
Package
SC79
SCD80
SOD323
Configuration
single
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
LS(nH)
0.6
0.6
1.8
Marking
7
77
white 7
Value
16
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2011-06-15
BBY55...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 15 V
VR = 15 V, TA = 85 °C
IR
- -3
- - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 10 V, f = 1 MHz
CT
17.5 18.6 19.6
14 15 16
11.6 12.6 13.6
10 11 12
5.5 6 6.5
Capacitance ratio
VR = 2 V, VR = 10 V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
CT2/CT10
rS
2 2.5 3
- 0.15 0.4
Unit
nA
pF
Ω
2 2011-06-15
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