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Infineon |
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
• Pb-free (RoHS compliant) package
BBY53...
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53
BBY53-05W
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Type
BBY53
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-05W
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
SOT323
Configuration
common cathode
single, leadless
single
single
single
common cathode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
LS(nH)
2
0.4
0.6
0.6
1.8
1.4
Marking
S7s
LL
L
LL
white 5
S7s
Value
6
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 2011-06-15
BBY53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 4 V
VR = 4 V, TA = 85 °C
IR
- - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
CT
CT1/CT3
4.8 5.3 5.8
1.85 2.4 3.1
1.8 2.2 2.6
rS - 0.47 -
Unit
nA
pF
-
Ω
2 2011-06-15
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