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Infineon |
Silicon PIN Diode
• For low loss RF switches and attenuators
• Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
• Low forward resistance (typ. 1.5 Ω @ 5mA)
• Low harmonics
• Pb-free (RoHS compliant) package
BAR67...
BAR67-02V
BAR67-04
!
, ,
Type
BAR67-02V
BAR67-04
Package
SC79
SOT23
Configuration
single
series
LS(nH)
0.6
1.8
Marking
T
PMs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS ≤ 118°C, BAR67-02V
TS ≤ 25°C, BAR67-04
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Value
150
200
250
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point1)
BAR67-02V
BAR67-04
Symbol
RthJS
Value
≤ 115
≤ 290
Unit
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 2011-06-14
BAR67...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 100 V
Forward voltage
IF = 50 mA
V(BR)
IR
VF
150 -
-V
- - 20 nA
- 0.95 1.2 V
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT pF
- 0.35 0.55
- 0.35 0.9
- 0.25 -
- 0.23 -
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
I-region width
RP
rf
τ rr
WI
kΩ
- 25 -
-4-
- 2.5 -
Ω
- 1.5 1.8
- 1-
- 700 - ns
- 13 - µm
2 2011-06-14
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