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ROHM Semiconductor |
S6201
SiC Schottky Barrier Diode Bare Die
VR 650V
IF 6A*1
QC 9nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
Data Sheet
(C) Cathode
(A) Anode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM 650
VR 650
IF 6*1
24*2
IFSM
91*3
18*4
IFRM
26*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit
V
V
A
A
A
A
A
°C
°C
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© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A
S6201
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.12mA
600 -
-
IF=6A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=6A,Tj=150°C
- 1.55 -
IF=6A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 1.2 120
Reverse current
IR VR=600V,Tj=150°C
- 18 -
VR=600V,Tj=175°C
- 42 -
Total capacitance
VR=1V,f=1MHz
C
VR=600V,f=1MHz
- 219 -
- 22 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 9 -
Switching time
tc VR=400V,di/dt=350A/ms - 12 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/3
2014.05 - Rev.A
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