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ROHM Semiconductor |
Super Fast Recovery Diode
RF081MM2S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
1.6±0.1
0.1±0.1
0.05
lLand size figure (Unit : mm)
1.2
lApplication
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
lConstruction
Silicon epitaxial planar type
0.9±0.1
ROHM : PMDU
JEITA : SOD-123
1 : Manufacture Date
0.8±0.1
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf11..5555±00.0.055
PMDU
lStructure
Cathode
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf11..00±00.1.1
1.5MAX
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
VR Direct reverse voltage
200 V
Average rectified foward current
Io
On glass epoxy substrate
Ta= 45°C
60Hz half sin wave , Resistive load Tl= 130°C
0.8
1
A
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
20
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF
IF=0.8A
IF=1A
0.75 0.81 0.95
V
- 0.82 0.98
Reverse current
IR
VR=200V
- 0.01 10 mA
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 14 25 ns
Thermal resistance
Rth(j-l)
Junction to lead
- - 20 °C / W
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© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2014.07 - Rev.A
RF081MM2S
lElectrical characteristic curves
Data Sheet
10
1
0.1
0.01
Tj = 150°C
Tj = 125°C
Tj = 75°C
0.001
0
Tj = 25°C
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C Tj = 125°C
100
Tj = 75°C
10
Tj = 25°C
1
0.1
0
50 100 150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
100 100
f = 1MHz
Ta = 25°C
IFSM
8.3ms 8.3ms
1cyc.
10 10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Tj = 25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2014 ROHM Co., Ltd. All rights reserved.
2/4
2014.07 - Rev.A
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