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ROHM Semiconductor |
Super Fast Recovery Diode
RF071MM2S
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
0.05
Land size figure (Unit : mm)
1.2
Application
General rectification
Features
1) Ultra low forward voltage
2) Low switching loss
Construction
Silicon epitaxial planar type
0.9±0.1
ROHM : PMDU
JEITA : SOD-123
1 : Manufacture Date
0.8±0.1
Taping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
PMDU
Structure
Cathode
Anode
0.25±0.05
1.81±0.1
Absolute maximum ratings (Ta= 25°C)
4.0±0.1
φ11..00±00..11
1.5MAX
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
VR Direct reverse voltage
200 V
Direct forward current
IF
-
Average rectified foward current
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
1
0.7
15
A
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF
IF=0.7A
0.7 0.78 0.85 V
Reverse current
IR
VR=200V
- 0.01 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns
Thermal resistance
Rth(j-l)
Junction to lead
- - 20 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.06 - Rev.B
RF071MM2S
Electrical characteristic curves
Data Sheet
10
1
0.1
0.01
Tj = 150°C
Tj = 125°C
Tj = 75°C
0.001
0
Tj = 25°C
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
Tj = 125°C
100
Tj = 75°C
10
Tj = 25°C
1
0.1
0
50 100 150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
100 100
f = 1MHz
Ta = 25°C
IFSM
8.3ms 8.3ms
1cyc.
10 10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Tj = 25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
2/4
2015.06 - Rev.B
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