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E50A37VBR 반도체 회로 부품 판매점

STACK SILICON DIFFUSED DIODE



KEC 로고
KEC
E50A37VBR 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
E50A37VBS, E50A37VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=50A.
Zener Voltage : 37V(Typ.)
POLARITY
E50A37VBS (+ Type)
E50A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
IF(AV)
IFSM
IRSM
Transient Peak Reverse
Voltage
VRSM
Peak Reverse Voltage
Junction Temperature
VRM
Tj
Storage Temperature Range
Tstg
RATING
50
300 (60Hz)
50
34
32
-40 215
-40 215
UNIT
A
A
A
V
V
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Zener Voltage
VZ
Reverse Current
IR
Transient Thermal Resistance
Breakdown Voltage
VF
Vbr
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
T
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=32V
IFM=100A, IM=100mA, Pw=100mS
Irsm=50A, Pw=10mS
IZ=10mA
Ta=150 , VR=32V
DC total junction to case
MIN.
-
34
-
-
-
-
-
-
TYP.
-
37
-
-
-
27
-
-
MAX.
1.10
40
10
60
55
-
UNIT
V
V
A
mV
V
mV/
100 A
0.6 /W
2002. 1. 30
Revision No : 1
1/1




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E50A37VBR diode

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