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PDF E50A37VBS Data sheet ( Hoja de datos )
| Número de pieza | E50A37VBS | |
| Descripción | STACK SILICON DIFFUSED DIODE | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
E50A37VBS, E50A37VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=50A.
Zener Voltage : 37V(Typ.)
POLARITY
E50A37VBS (+ Type)
E50A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
IF(AV)
IFSM
IRSM
Transient Peak Reverse
Voltage
VRSM
Peak Reverse Voltage
Junction Temperature
VRM
Tj
Storage Temperature Range
Tstg
RATING
50
300 (60Hz)
50
34
32
-40 215
-40 215
UNIT
A
A
A
V
V
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Zener Voltage
VZ
Reverse Current
IR
Transient Thermal Resistance
Breakdown Voltage
VF
Vbr
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
T
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=32V
IFM=100A, IM=100mA, Pw=100mS
Irsm=50A, Pw=10mS
IZ=10mA
Ta=150 , VR=32V
DC total junction to case
MIN.
-
34
-
-
-
-
-
-
TYP.
-
37
-
-
-
27
-
-
MAX.
1.10
40
10
60
55
-
UNIT
V
V
A
mV
V
mV/
100 A
0.6 /W
2002. 1. 30
Revision No : 1
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet E50A37VBS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| E50A37VBR | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | .gif){kind=logo} KEC(Korea Electronics) |
| E50A37VBR | STACK SILICON DIFFUSED DIODE | KEC |
| E50A37VBS | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) | KEC(Korea Electronics) |
| E50A37VBS | STACK SILICON DIFFUSED DIODE | KEC |
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