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NXP Semiconductors |
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Configuration
BAS21W
BAS21AW
BAS21SW
single
dual common anode
dual series
Package
NXP
SOT323
JEDEC
SC-70
Package
configuration
very small
1.2 Features
I High switching speed: trr ≤ 50 ns
I Low leakage current
I High reverse voltage: VR ≤ 250 V
I Low capacitance: Cd ≤ 2 pF
I Very small SMD plastic package
I AEC-Q101 qualified
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 200 V
Min Typ
[1] -
-
-
[2] -
-
-
-
-
[1] Single diode loaded.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
225
100
250
50
Unit
mA
nA
V
ns
NXP Semiconductors
BAS21W series
High-voltage switching diodes
2. Pinning information
Table 3. Pinning
Pin Description
BAS21W
1 anode
2 not connected
3 cathode
BAS21AW
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
BAS21SW
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
Simplified outline Graphic symbol
3
12
3
12
006aaa764
3
12
3
12
006aab099
3
12
3
12
006aaa763
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAS21W
SC-70
plastic surface-mounted package; 3 leads
BAS21AW
BAS21SW
Version
SOT323
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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