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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAW62
High-speed diode
Product data sheet
Supersedes data of April 1996
1996 Sep 17
NXP Semiconductors
High-speed diode
Product data sheet
BAW62
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
• Fast logic applications.
DESCRIPTION
The BAW62 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
handbook, halfpagke
a
MAM246
The diode is type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 μs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
−
−
−
−
MAX.
75
75
250
450
UNIT
V
V
mA
mA
− 4A
− 1A
− 0.5 A
− 350 mW
−65 +200 °C
− 200 °C
1996 Sep 17
2
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