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GeneSiC |
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 150 °C
50 100 200
35 70 140
50 100 200
12 12 12
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
240
240
240
400 600 V
280 420 V
400 600 V
12 12 A
240 240 A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF
IR
RthJC
IF = 12 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 175 °C
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1 1.1 V
10 10 μA
15 15 mA
2.00 2.00 °C/W
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1N1199A thru 1N1206AR
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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