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NXP Semiconductors |
PMBD914
Single high-speed switching diode
Rev. 06 — 11 February 2009
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number[1]
PMBD914
PMBD914/DG
Package
NXP
SOT23
JEDEC
TO-236AB
[1] /DG: halogen-free
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM ≤ 100 V
I Low capacitance: Cd ≤ 1.5 pF
I Reverse voltage: VR ≤ 100 V
I Small SMD plastic package
1.3 Applications
I High-speed switching
1.4 Quick reference data
Table 2.
Symbol
IF
VR
trr
Quick reference data
Parameter
forward current
reverse voltage
reverse recovery time
Conditions
Min Typ Max Unit
[1] - - 215 mA
- - 100 V
[2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
NXP Semiconductors
PMBD914
Single high-speed switching diode
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
Simplified outline Graphic symbol
3
12
3
12
006aaa764
3. Ordering information
4. Marking
Table 4. Ordering information
Type number[1] Package
Name
Description
PMBD914
-
plastic surface-mounted package; 3 leads
PMBD914/DG
[1] /DG: halogen-free
Version
SOT23
Table 5. Marking codes
Type number
PMBD914
PMBD914/DG
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*5D
YB*
PMBD914_6
Product data sheet
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
voltage
-
VR reverse voltage
IF forward current
IFRM
repetitive peak forward
current
-
[1] -
-
IFSM
non-repetitive peak forward square wave
[2]
current
tp = 1 µs
-
tp = 1 ms
-
tp = 1 s
-
Rev. 06 — 11 February 2009
Max Unit
100 V
100 V
215 mA
500 mA
4A
1A
0.5 A
© NXP B.V. 2009. All rights reserved.
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