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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD6050
High-speed diode
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 70 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
APPLICATIONS
• High-speed switching in thick and thin-film circuits.
DESCRIPTION
The PMBD6050 is a high-speed switching diode fabricated
in planar technology, and encapsulated in a small SOT23
plastic SMD package.
MARKING
TYPE NUMBER
PMBD6050
MARKING CODE(1)
*5A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpa2ge
1
2
n.c.
3
1
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBD6050
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 14
2
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