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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD354
Schottky barrier double diode
Product data sheet
Supersedes data of 2002 Aug 06
2003 Mar 25
NXP Semiconductors
Schottky barrier double diode
Product data sheet
PMBD354
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance
• Matched capacitance.
PINNING
PIN DESCRIPTION
1 cathode k1
2 anode a2
3 common connection a1, k2
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
handbook, 2 columns
3
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
PMBD354
MARKING
CODE(1)
*V8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
1
Top view
2
MGC421
1
2
MGC487
Fig.1 Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR
IF
Tstg
Tj
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
MAX.
UNIT
−4V
− 30 mA
−65
+150
°C
− 100 °C
2003 Mar 25
2
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