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HSMS-280L 반도체 회로 부품 판매점

Surface Mount RF Schottky Barrier Diodes



AVAGO 로고
AVAGO
HSMS-280L 데이터시트, 핀배열, 회로
HSMS-280x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifications and package configurations to
give the designer wide flexibility. The HSMS-280x series
of diodes is optimized for high voltage applications.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent sites
on the wafer, assuring the highest degree of match.
Features
x Surface Mount Packages
x High Breakdown Voltage
x Low FIT (Failure in Time) Rate*
x Six-sigma Quality Level
x Single, Dual and Quad Versions
x Tape and Reel Options Available
x Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-323 (Top View)
SINGLE
SERIES
Package Lead Code Identification, SOT-363 (Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
B
COMMON
ANODE
E
C
COMMON
CATHODE
F
Package Lead Code Identification, SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
123
K
COMMON
CATHODE QUAD
654
123
M
BRIDGE
QUAD
654
123
P
123
L
COMMON
ANODE QUAD
654
123
N
RING
QUAD
654
123
R
12
#0
UNCONNECTED
PAIR
34
12
#2
BRIDGE
QUAD
34
12
#3
12
#4
1 #5 2
1 #8 2


HSMS-280L 데이터시트, 핀배열, 회로
Pin Connections and Package Marking, SOT-363
Notes:
1 6 1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
25
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
34
Absolute Maximum Ratings[1] TC = 25°C
Symbol
Parameter
If Forward Current (1 μs Pulse)
PIV Peak Inverse Voltage
Tj Junction Temperature
Tstg Storage Temperature
Tjc Thermal Resistance[2]
Unit SOT-23/SOT-143 SOT-323/SOT-363
Amp 1
1
V Same as VBR
°C 150
Same as VBR
150
°C -65 to 150
-65 to 150
°C/W 500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TA = 25°C, Single Diode [3]
Part
Number
HSMS[4]
2800
2802
2803
2804
2805
2808
280B
280C
280E
280F
Package
Marking
Code
A0
A2
A3
A4
A5
A8
A0
A2
A3
A4
280K
AK
280L
AL
280M
H
280N
N
280P
AP
280R
O
Test Conditions
Lead
Code Configuration
0 Single
Minimum
Breakdown
Voltage
VBR (V)
2 Series
3 Common Anode
4 Common Cathode
5 Unconnected Pair
8 Bridge Quad[4]
B Single
C Series
E Common Anode
70
F Common Cathode
K
High Isolation
Unconnected Pair
L Unconnected Trio
M Common Cathode Quad
N Common Anode Quad
P Bridge Quad
R Ring Quad
IR = 10 mA
Maximum
Forward
Voltage
VF (mV)
410
IF = 1 mA
Maximum
Forward
Voltage
VF (V) @ IF (mA)
Maximum
Reverse
Leakage
IR (nA) @ VR (V)
1.0 @ 15
200 @ 50
Notes:
1. DVF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. DCTO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2 Ω at 25°C and If = 5 mA.
Maximum
Capacitance
CT (pF)
2.0
VF = 0 V
f = 1 MHz
Typical
Dynamic
Resistance
RD (Ω)[5]
35
IF = 5 mA
2




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HSMS-280L diode

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