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HSMS-270C 반도체 회로 부품 판매점

High Performance Schottky Diode



AVAGO 로고
AVAGO
HSMS-270C 데이터시트, 핀배열, 회로
HSMS-2700, 2702, 270B, 270C, 270P
High Performance Schottky Diode
for Transient Suppression
Data Sheet
Description
The HSMS-2700 series of Schottky diodes, commonly
referred to as clipping /clamping diodes, are optimal for
circuit and waveshape preservation applications with
high speed switching. Ultra-low series resistance, RS,
makes them ideal for protecting sensitive circuit elements
against higher current transients carried on data lines.
With picosecond switching, the HSMS-270x can respond
to noise spikes with rise times as fast as 1 ns. Low ca-
pacitance minimizes waveshape loss that causes signal
degradation.
Features
Ultra-low Series Resistance for Higher Current
Handling
Picosecond Switching
Low Capacitance
Lead-free
Applications
RF and computer designs that require circuit protection,
high-speed switching, and voltage clamping.
HSMS-270x DC Electrical Specifications, TA = +25°C[1]
Part Package
Number Marking Lead
HSMS- Code[2] Code Configuration Package
-2700 J0
0 Single
SOT-23
Maximum
Forward
Voltage
VF (mV)
Minimum
Breakdown
Voltage
VBR (V)
Typical
Capacitance
CT (pF)
Typical
Series
Resistance
RS (Ω)
-270B
B
SOT-323
(3-lead SC-70)
-2702
-270C
J2
2
C Series
SOT-23
550 [3]
SOT-323
(3-lead SC-70)
15[4]
6.7[5]
0.65
-270P JP
P
Bridge Quad
SOT-363
(6-lead SC-70)
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IR = 100 μA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA; guaranteed by design.
Maximum
Eff. Carrier
Lifetime
τ (ps)
100[6]
Package Lead Code Identification (Top View)
SINGLE
3
SERIES
3
BRIDGE QUAD
6 54
1 0, B 2
1 2, C 2
123


HSMS-270C 데이터시트, 핀배열, 회로
Absolute Maximum Ratings, TA= 25ºC
Absolute Maximum[1]
Symbol Parameter
Unit
HSMS-2700/-2702
HSMS-270B/270C/270P
IF
IF- peak
PT
PINV
TJ
TSTG
θJC
DC Forward Current
Peak Surge Current (1μs pulse)
Total Power Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance, junction to lead
mA
A
mW
V
°C
°C
°C/W
350
1.0
250
15
150
-65 to 150
500
750
1.0
825
15
150
-65 to 150
150
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
Linear and Non-linear SPICE Model
0.08 pF
2 nH
RS
SPICE model
SPICE Parameters
Parameter
BV
CJO
EG
IBV
IS
N
RS
PB
PT
M
Unit
V
pF
eV
A
A
Ω
V
Value
25
6.7
0.55
10E-4
1.4E-7
1.04
0.65
0.6
2
0.5
2




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HSMS-270C diode

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