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Sony Corporation |
Variable Capacitance Diode
1T417
Description
The 1T417 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).
M-290
Features
• Super-small-miniature flat package
• Low series resistance: 1.5 Ω Max. (f=470 MHz)
• Large capacitance ratio: 15.5 Typ. (C1/C25)
• Small leakage current: 10 nA Max. (VR=25 V)
• Capacitance deviation in a matching group:
within 6 %
Applications
Electronic tuning of BS/CS tuners
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR 30 V
• Peak reverse voltage VRM
35
V
(RL ≥ 10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Electrical Characteristics
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
IR
VR
C1
C25
C1/C25
rs
Conditions
VR=25 V
IR=1 µA
VR=1 V, f=1 MHz
VR=25 V, f=1 MHz
VR=5 V, f=470 MHz
∆C VR=1 to 25 V, f=1 MHz
(Ta=25 °C)
Min. Typ. Max. Unit
10 nA
30 V
7.8 8.6 9.4 pF
0.5 0.6 pF
13.0 15.5
1.30 1.50
Ω
6.0 %
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E98905-TE
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage
10
Ta=25°C
5
2
1
0.5
0.2
0.1
1
2
5 10 20
50
VR-Reverse voltage (V)
1T417
1000
Reverse current vs. Ambient temperature
VR=25V
100
10
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
Forward voltage vs. Ambient temperature
0.90
IF=1mA
0.80
0.70
0.60
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
Reverse voltage vs. Ambient temperature
45
IR=10µA
40
35
30
–20
0 20 40 60
Ta-Ambient temperature (°C)
80
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