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PDF 1SV304 Data sheet ( Hoja de datos )
| Número de pieza | 1SV304 | |
| Descripción | VARIABLE CAPACITANCE DIODE (VCO FOR VHF BAND RADIO) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV304
1SV304
VCO for VHF Band Radio
• Small package
• High capacitance ratio: C1 V/C4 V = 3.0 (typ.)
• Low series resistance: rs = 0.27 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
3
17.3 18.3 19.3
5.3 6.1 6.6
2.8 3 ⎯
⎯ 0.27 0.32
V
nA
pF
pF
⎯
Ω
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SV304.PDF ] | |
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