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1SV239 반도체 회로 부품 판매점

VARIABLE CAPACITANCE DIODE (VCO FOR UHF RADIO)



Toshiba Semiconductor 로고
Toshiba Semiconductor
1SV239 데이터시트, 핀배열, 회로
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV239
1SV239
VCO for UHF Radio
Ultra low series resistance: rs = 0.44 (typ.)
Useful for small size set
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 15 V
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C2 V
C10 V
C2 V/C10 V
rs
IR = 1 μA
VR = 15 V
VR = 2 V, f = 1 MHz
VR = 10 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Marking
Min Typ. Max Unit
15 ⎯ ⎯
⎯⎯
3
3.8 4.25 4.7
1.5 1.75 2.0
2.0 2.4
0.44 0.6
V
nA
pF
pF
Ω
1 2007-11-01


1SV239 데이터시트, 핀배열, 회로
1SV239
Note:
δC
=
C
(Ta) C
C (25)
(25)
× 100
(%)
2 2007-11-01




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제조업체: Toshiba Semiconductor

( toshiba )

1SV239 diode

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