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Toshiba Semiconductor |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
TV Tuning
· High capacitance ratio: C2 V/C25 V = 6.5 (typ.)
· Low series resistance: rs = 0.4 Ω (typ.)
· Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
VRM
Tj
Tstg
Rating
30
35 (RL = 10 kW)
125
-55~125
Unit
V
V
°C
°C
1SV214
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR IR = 1 mA
IR VR = 28 V
C2 V
VR = 2 V, f = 1 MHz
C25 V
VR = 25 V, f = 1 MHz
C2 V/C25 V
¾
rs VR = 5 V, f = 470 MHz
Note 1: Units are compounded in one package and are matched to 2.5%.
C (max) - C (min)
C (min)
=< 0.025
(VR = 2~25 V)
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
30 ¾ ¾
¾ ¾ 10
14.16 ¾ 16.25
2.11 ¾ 2.43
5.90 6.50 7.15
¾ 0.4 0.55
V
nA
pF
pF
¾
W
1 2003-04-02
1SV214
Note 2:
dC
=
C
(Ta) - C
C (25)
(25)
´ 100
(%)
2 2003-04-02
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