|
Hitachi Semiconductor |
1SS199
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-299A (Z)
Rev. 1
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
1SS199
Cathode band
Green
Mark
3
Package Code
MHD
Outline
12
Cathode band
1. Cathode
2. Anode
1SS199
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
Reverse current
Capacitance
Rectifier efficiency
IF
IR
C
η
3.0 —
——
——
70 —
— mA VF = 1V
100 µA
VR = 10V
3.0 pF VR = 1V, f = 1MHz
— % Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL
= 20pF
ESD-Capability
—
70 — — V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; IR ≥ 200µA at VR = 10V
|