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1SS199 반도체 회로 부품 판매점

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching



Hitachi Semiconductor 로고
Hitachi Semiconductor
1SS199 데이터시트, 핀배열, 회로
1SS199
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-299A (Z)
Rev. 1
Features
Detection efficiency is very good.
Small temperature coefficient.
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
1SS199
Cathode band
Green
Mark
3
Package Code
MHD
Outline
12
Cathode band
1. Cathode
2. Anode


1SS199 데이터시트, 핀배열, 회로
1SS199
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
Reverse current
Capacitance
Rectifier efficiency
IF
IR
C
η
3.0 —
——
——
70 —
— mA VF = 1V
100 µA
VR = 10V
3.0 pF VR = 1V, f = 1MHz
— % Vin = 2Vrms, f = 40MHz, RL = 5k, CL
= 20pF
ESD-Capability
70 — — V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; IR 200µA at VR = 10V




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제조업체: Hitachi Semiconductor

( hitachi )

1SS199 diode

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