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1SS198 반도체 회로 부품 판매점

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching



Hitachi Semiconductor 로고
Hitachi Semiconductor
1SS198 데이터시트, 핀배열, 회로
1SS198
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
Features
Detection efficiency is very good.
Small temperature coefficient.
Small glass package (MHD) enables easy mounting and high reliability.
ADE-208-298A (Z)
Rev. 1
Oct. 1998
Ordering Information
Type No.
1SS198
Cathode
Green
Mark
2
Package Code
MHD
Outline
12
Cathode band
1. Cathode
2. Anode


1SS198 데이터시트, 핀배열, 회로
1SS198
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
10
30
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
Reverse current
Capacitance
Rectifier efficiency
ESD-Capability *1
IF
IR
C
η
4.5 —
——
——
70 —
100 —
— mA VF = 1V
70 µA VR = 6V
1.5 pF VR = 1V, f = 1MHz
— % Vin = 2Vrms, f = 40MHz, RL = 5k,
CL = 20pF
—V
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure Criterion ; IR 140µA at VR = 6V
2




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1SS198 diode

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