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Hitachi Semiconductor |
1SS198
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• Small glass package (MHD) enables easy mounting and high reliability.
ADE-208-298A (Z)
Rev. 1
Oct. 1998
Ordering Information
Type No.
1SS198
Cathode
Green
Mark
2
Package Code
MHD
Outline
12
Cathode band
1. Cathode
2. Anode
1SS198
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
10
30
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward current
Reverse current
Capacitance
Rectifier efficiency
ESD-Capability *1
IF
IR
C
η
—
4.5 —
——
——
70 —
100 —
— mA VF = 1V
70 µA VR = 6V
1.5 pF VR = 1V, f = 1MHz
— % Vin = 2Vrms, f = 40MHz, RL = 5kΩ,
CL = 20pF
—V
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure Criterion ; IR ≥ 140µA at VR = 6V
2
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