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DH2F100N4S 반도체 회로 부품 판매점

Ultra-Fast Soft Recovery Diode Module



Dawin Electronics 로고
Dawin Electronics
DH2F100N4S 데이터시트, 핀배열, 회로
Nov. 2007
Ultra-Fast Soft Recovery Diode Module
Description
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical systems.
These diode modules are ideally suited for power converters,
motors drives and other applications where switching losses
are significant portion of the total losses.
Features
Repetitive Reverse Voltage : VRRM = 400V
Low Forward Voltage Drop : VF(typ.) = 1.05V
Average Forward Current : IF(AV.) = 100A @ Tc = 100
Ultra-Fast Reverse Recovery Time : trr(typ.) = 90 ns
Extensive Characterization of Recovery Parameters
Reduced EMI and RFI
Non Isolation Type Package and 175 Operating Junction Temperature
Dual FRD Construction
Applications
High Speed & High Power Converters, Welders,
Various Switching and Telecommunication Power Supply.
Ordering Information
Device Name
DH2F100N4S
Optional
Information
Common Heat Sink
Non Isolation Type
DH2F100N4S
Equivalent Circuit and Package
Equivalent Circuit
12
H
(Common Heat Sink)
Package : 3DM2 -NI Series
Non Isolation Type
Please see the package Out line information
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Symbol
VRRM
VR(DC)
IF(AV)
IFSM
I2t
Tj
Tstg
-
-
-
Parameter
Repetitive Peak Reverse Voltage
Reverse DC Voltage
Average Forward Current @ Tc = 25
@ Tc = 100
Surge(non-repetitive) Forward
Current
I2t for Fusing
Junction Temperature
Storage Temperature
Mounting Torque(M6)
Terminal Torque(M6)
Weight
Conditions
Resistive Load
One Half Cycle at 60Hz,
Peak Value
Value for One Cycle Current,
tw = 8.3ms, Tj = 25 Start
Typical Including Screws
Ratings
400
320
200
100
2000
16.7* 103
-40 ~ 175
-40 ~ 150
4.0
3.0
95
Unit
V
V
A
A
A
A2s
N.m
N.m
g
Copyright@Dawin Electronics Corp. All right reserved
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DH2F100N4S 데이터시트, 핀배열, 회로
Nov. 2007
Thermal Characteristics
Symbol
Parameter
Rth(j-c)
Thermal Resistance(Non Isolation Type)
Conditions
Junction to Case
DH2F100N4S
Values
Unit
Min. Typ. Max.
- - 0.32 /W
Electrical Characteristics @ Tj=25 (unless otherwise specified)
Symbol
Parameter
Conditions
VR
Cathode Anode Breakdown
IR = 100uA
Voltage
VFM
Maximum Forward Voltage
IFM = 100A, Tc = 25
IFM = 100A, Tc =100
IRRM
Repetitive Peak Reverse
TC = 100 , VRRM applied
Current
Trr
Reverse Recovery Time
IFM = 100A,
Tc = 25
VR = 200V
di/dt=-100A/us
Tc = 100
Values
Min. Typ.
400 -
- 1.05
- 0.95
--
- 90
- 120
Unit
Max.
-V
1.3 V
1.1 V
1.0 mA
120 ns
- ns
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DH2F100N4S diode

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