|
VIKING TECH |
Data Sheet
Customer:
Product :
Part No.:
Issued Date:
Edition :
Small Signal Schottky Diode-Standard
B120W-F/B130W-F/B140W-F/B160W-F/B1100W-F/B1150W-F/B1200W-F
11-Jan-11
REV.A
VIKING TECH CORPORATION
光頡科技股份有限公司
VIKING TECH CORPORATION KAOHSIUNG BRANCH WUXI TMTEC CO., LTD.
光頡科技股份有限公司高雄分公司
無錫泰銘電子有限公司
No.70, Kuanfu N. Rad.,
Hsin Chu Industrial Park,
Hukou Hsiang, Hsin Chu Hsien,
303, Taiwan
TEL:886-3-5972931
FAX:886-3-5972935•886-3-5973494
E-mail:[email protected]
No.248-3, Sin-Sheng Rd., Cian-Jhen Dist., Kaohsiung,
806, Taiwan
TEL:886-7-8217999
FAX:886-7-8228229
E-mail:[email protected]
No.1A,(Xixia Road),Machinery & Industry Park,
National Hi-Tech Industrial Development Zone of
Wuxi, Wuxi, Jiangsu Province, China
Zip Code:214028
TEL:86-510-85203339
FAX:86-510-85203667•86-510-85203977
E-mail:[email protected]
Produced by
(QC)
11-Jan-11
Kris
Checked
(QC)
11-Jan-11
Ann
Approved by
(QC)
11-Jan-11
J.C Liu
Prepared by
(Sales)
11-Jan-11
Accepted by
(Customer)
Tel: +886-3-597-2931/Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
1
1 Amperes Surface Mount Schottky Barrier Rectifiers
Voltage : 20 to 200Volts
■Features
-Low profile surface mounted application in order to optimize board space
-Low power loss, high efficiency
-High current capability, low forward voltage drop
-High surge capability
-Guardring for over voltage protection
-Ultra high-speed switching
-Silicon epitaxial planar chip, metal silicon junction
-Lead-free parts meet environmental standards of MIL-STD-19500/228
-Halogen free
■Mechanical Data
Epoxy : UL94-V0 rated flame retardant
Case:Molded Plastic, SOD-123F
Terminals : Solder plated, Solderable per MIL-STD-750, Method 2026
Polarity:Indicated by cathode band
Weight : Approximated 0.018 gram
Packaging : 2.5Kpcs per 7” reel
▓Package Dimensions in inches(millimeters): SOD-123F
▓Maximum Ratings And Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbol B120W-F B130W-F B140W-F B160W-F B1100W-F B1150W-F
Marking Code
12 13 14 16 10 115
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
60
100
150
Maximum RMS Voltage
VRMS
14
21
28
42
70
105
Maximum DC Blocking Voltage
VDC 20 30 40 60 100 150
Maximum Instantaneous Forward Voltage
@1.0A, TA=25℃
VF
0.52
0.70 0.81
0.87
Operating Temperature
TJ -50 ~ +125
-50 ~ +150
B1200W-F
120
200
140
200
0.90
Unit
V
V
V
V
℃
Parameter
Forward Rectified Current
Forward Surge Current
Reverse Current
Thermal Resistance
Diode Junction Capacitance
Storage Temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM , TA=25℃
VR=VRRM , TA=100℃
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
IR
RΘJA
CJ
TSTG
Min.
-50
Typ.
88
120
Max.
1.0
30
0.1
20
+150
Unit
A
A
mA
℃/W
pF
℃
Tel: +886-3-597-2931/Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
2
|