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RB095B-90 반도체 회로 부품 판매점

Schottky Barrier Diode



ROHM Semiconductor 로고
ROHM Semiconductor
RB095B-90 데이터시트, 핀배열, 회로
Schottky Barrier Diode
RB095B-90
Applications
General rectification
Dimensions(Unit : mm)
Data Sheet
Land size figure(Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
1.6 1.6
ROHM : CPD
JEITA : SC-63
Manufacture Date
CPD 2.3 2.3
Structure
(2)
(1) (3)
Taping specifications(Unit : mm)
2.0 0.05
4.0 0.1
8.0 0.1
1.55 0.1
0
TL
0.4 0.1
6.8 0.1
8.0 0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
90
90
6
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
IFSM
Tj
45
150
Storage temperature
Tstg 40 to 150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C
3.0 0.1
Unit
V
V
A
A
C
C
2.7 0.2
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.75
IR - - 150
jc - - 6.0
Unit
V
A
C/W
Conditions
IF=3.0A
VR=90V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.F


RB095B-90 데이터시트, 핀배열, 회로
RB095B-90
Electrical characteristics curves
Data Sheet
10
Ta=150C
1 Ta=125C
Ta=75C
0.1
Ta=25C
Ta=-25C
0.01
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
740
Ta=25C
IF=3A
730 n=30pcs
720 AVE : 711.1mV
710
700
690
VF DISPERSION MAP
100000
Ta=150C Ta=125C
10000
1000
Ta=75C
100
Ta=25C
10
1 Ta=-25C
0.1
0.01
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
180 Ta=25C
VR=90V
160 n=30pcs
140
120
100
80
60
AVE : 13.7uA
40
20
0
IR DISPERSION MAP
300
250 Ifsm 1cyc
200 8.3ms
150
100
50 AVE : 86.0A
0
IFSM DISPERSION MAP
30
Ta=25C
25 IF=0.5A
IR=1A
20 Irr=0.25*IR
n=10pcs
15
10
5 AVE : 8.30ns
0
trr DISPERSION MAP
1000
100
f=1MHz
10
1
0 10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
400
390 Ta=25C
380 f=1MHz
370
VR=0V
n=10pcs
360
350
340 AVE : 357.9pF
330
320
310
300
Ct DISPERSION MAP
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.F




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RB095B-90 diode

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Schottky Barrier Diode - ROHM Semiconductor