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BAV19W, BAV20W, BAV21W
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 m tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BAV19W
VR = 100 V
BAV20W
VR = 150 V
BAV21W
VR = 200 V
ORDERING CODE
BAV19W-E3-08 or BAV19W-E3-18
BAV19W-HE3-08 or BAV19W-HE3-18
BAV20W-E3-08 or BAV20W-E3-18
BAV20W-HE3-08 or BAV20W-HE3-18
BAV21W-E3-08 or BAV21W-E3-18
BAV21W-HE3-08 or BAV21W-HE3-18
TYPE
MARKING
A8
INTERNAL
CONSTRUCTION
Single diode
REMARKS
Tape and reel
A9
Single diode
Tape and reel
AA
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
DC Forward current (1)
Rectified current (average) half wave
rectification with resist. load (1)
Repetitive peak forward current (1)
Surge forward current
Power dissipation (1)
f 50 Hz, = 180°
t < 1 s, Tj = 25 °C
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
VR
VR
VR
VRRM
VRRM
VRRM
IF
IF(AV)
IFRM
IFSM
Ptot
VALUE
100
150
200
120
200
250
250
200
625
1
410
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature (1)
Storage temperature range (1)
RthJA
Tj
Tstg
Operating temperature range
Top
Note
(1) Valid provided that leads are kept at ambient temperature
VALUE
375
150
- 65 to + 150
- 55 to + 150
UNIT
°C/W
°C
°C
°C
Rev. 1.5, 13-May-13
1 Document Number: 85725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL
MIN.
TYP.
Forward voltage
Leakage current
Dynamic forward
resistance
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 100 V, Tj = 100 °C
VR = 150 V
VR = 150 V, Tj = 100 °C
VR = 200 V
VR = 200 V, Tj = 100 °C
IF = 10 mA
BAV19W
BAV19W
BAV20W
BAV20W
BAV21W
BAV21W
VF
VF
IR
IR
IR
IR
IR
IR
rf
5
Diode capacitace
Reverse recovery time
VR = 0, f = 1 MHz
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100
CD
trr
1.5
MAX.
1
1.25
100
15
100
15
100
15
50
UNIT
V
V
nA
μA
nA
μA
nA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
Tj = 100 °C
500
400
10 25 °C
300
1 200
0.1
0.01
0
18858
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1
Fig. 1 - Forward Current vs. Forward Voltage
100
0
0
18860
40 80 120 160 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3 100
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30 60
90 120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1
1
18861
10
IF - Forward Current (mA)
100
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.5, 13-May-13
2 Document Number: 85725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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