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Galaxy Microelectronics |
Schottky Barrier Diode
FEATURES
z Low Forward drop voltage
z Fast switching
z Ultra-small surface mount package
z Availadle in lead free version
Pb
Lead-free
APPLICATIONS
z Schottky barrier detector and switching diodes
Production specification
BAT42WS/BAT43WS
SOD-323
ORDERING INFORMATION
Type No.
Marking
BAT42WS
BAT43WS
S7
S8
Package Code
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Peak Repetitive Peak reverse voltage
Working Peak
DC Reverse Voltage
RMS reverse voltage
Average rectified output current
Repetitive peak Forward Current @t<1.0s
Peak Forward Surge Current @<10ms
Power Dissipation
Thermal resistance,junction to ambient
VRRM
VRWM
VR
VR(RMS)
IO
IFRM
IFSM
Pd
RθjA
30
21
100
500
4.0
200
625
Junction temperature
Storage temperature range
Tj 125
Tstg -55 to +125
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
B014
Rev.A
www.gmicroelec.com
1
Production specification
Schottky Barrier Diode
BAT42WS/BAT43WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage All types
BAT42WS
BAT42WS
BAT43WS
BAT43WS
Symbol
V(BR)R
VF
VF
VF
VF
VF
Reverse current
IR
Reverse recovery time
Capacitance between
terminals
trr
CT
Conditions
IR=100μA
IF=200mA
IF=10mA
IF=50mA
IF=2mA
IF=15mA
VR=25V
VR=25V,TJ=100℃
IF=10mA,IR=10mA
RL=100Ω
VR=1.0V,f=1MHz
Min.
30
0.26
Typ.
Max.
1.0
0.4
0.65
0.33
0.45
0.5
0.1
5.0
10
Unit
V
V
V
V
V
V
μA
μA
ns
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
PACKAGE OUTLINE
B014
Rev.A
www.gmicroelec.com
2
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