1PS59SB21 반도체 회로 부품 판매점
Schottky barrier diode
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D114
1PS59SB21
Schottky barrier diode
Product specification
Supersedes data of 1998 Jul 28
1999 May 05
Philips Semiconductors
Schottky barrier diode
Product specification
1PS59SB21
FEATURES
• Ultra fast switching speed
• Low forward voltage
• Guard ring protected
• Small SMD package.
APPLICATIONS
• High-speed switching
• Voltage clamping
• Protection circuits.
DESCRIPTION
Planar Schottky barrier diode with an
integrated guard ring for stress
protection in an SC-59 small plastic
SMD package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
3
3
1
Top view
2
MSA314
1
2
n.c.
MLC357
Marking code: 21.
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
MIN.
−
−
−
−65
−
MAX.
40
200
1
+150
125
UNIT
V
mA
A
°C
°C
1999 May 05
2
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1PS59SB21 diode
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국내 전력반도체 판매점
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전력반도체 문의 : 010-3582-2743
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