파트넘버.co.kr YG339D6 데이터시트 PDF


YG339D6 반도체 회로 부품 판매점

Fast Recovery Diode ( Rectifier )



Fuji Semiconductors 로고
Fuji Semiconductors
YG339D6 데이터시트, 핀배열, 회로
YG339C6,N6,D6 (5A)
FAST RECOVERY DIODE
(600V / 5A)
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection diagram
YG339C6
1
2
YG339N6
1
2
YG339D6
1
2
3
3
3
Item
Repetitive peak reverse voltage
Symbol
VRRM
Conditions
Rating
600
Unit
V
Non-repetitive peak reverse voltage VRSM
600 V
Isolating voltage
Viso Terminals-to-Case, AC.1min
1500
V
Average output current
Surge current
IO Square wave, duty=1/2, Tc=110°C
IFSM Sine wave 10ms
5*
20
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
*Average forward current of centertap full wave connection
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
Reverse current
**
Reverse recovery time
Thermal resistance
Mechanical characteristics
VFM
IRRM
trr
Rth(j-c)
IFM=2.0A
VR=VRRM
IF=0.1A, IR=0.1A, Irec=0.01A
Junction to case
** Rating per element
2.5
100
0.05
3.5
V
µA
µs
°C/W
Mounting torque
Approximate weight
Recommended torque
0.3 to 0.5
2.3
N·m
g


YG339D6 데이터시트, 핀배열, 회로
(600V / 5A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
1 Tj=125°C
Tj=100°C
Tj=25°C
0.1
0.01
0
1234
VF Forward Voltage (V)
5
YG339C6,N6,D6 (5A)
Reverse Characteristic (typ.)
103
102
Tj=150°C
Tj=125°C
101 Tj=100°C
Tj=25°C
100
10-1
10-2
0
100 200 300 400 500 600 700 800
VR Reverse Voltage (V)
Forward Power Dissipation
14
12 11112222Io3333444455556666777788889999000011112222333344445555666677778888
λ
10 360o
8 Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
6 Square wave λ=180°
DC
4
2
Per 1element
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Io Average Forward Current (A)
Junction Capacitance Characteristic (typ.)
100
160
150
140
130
120
110
100
90
80
70
60
50
0
Current Derating (Io-Tc)
DC
Square wave λ=180°C
Sine wave λ=180°C
Square wave λ=120°C
Square wave λ=60°C
12345678
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability
100
10 10
1
10
100
VR Reverse Voltage (V)
1
1 10
Number of Cycles at 50Hz




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Fuji Semiconductors

( fujis )

YG339D6 diode

데이터시트 다운로드
:

[ YG339D6.PDF ]

[ YG339D6 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


YG339D6

Fast Recovery Diode ( Rectifier ) - Fuji Semiconductors