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SV1506FM 반도체 회로 부품 판매점

Fast Recovery Diode



Dynex Semiconductor 로고
Dynex Semiconductor
SV1506FM 데이터시트, 핀배열, 회로
Replaces March 1998 version, DS4209-2.2
SV15..F
SV15..F
Fast Recovery Diode
DS4209-3.0 January 2000
APPLICATIONS
s Induction Heating
s A.C. Motor Drives
s Snubber Diode
s Welding
s High Frequency Rectification
s UPS
FEATURES
s Thermal Fatigue Free Pressure Contact
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
Conditions
SV15 16F M or K
SV15 14F M or K
SV15 12F M or K
SV15 10F M or K
SV15 08F M or K
SV15 06F M or K
1600
1400
1200
1000
800
600
V = V + 100V
RSM
RRM
For 1/2" 20 UNF thread, add suffix K, e.g. SV15 16FK.
For M12 thread, add suffix M, e.g. SV15 16FM.
For stud anode add 'R' to type number, e.g. SV15 16FMR.
For outline DO8C add suffix 'C' to typ number,
e.g. SV15 16FKC.
KEY PARAMETERS
VRRM
I
F(AV)
IFSM
Qr
t
rr
1600V
205A
3000A
35µC
3.2µs
Outline type codes: DO8 and DO8C.
See Package Details for further information.
CURRENT RATINGS
Symbol
IF(AV)
IF(RMS)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
Max.
205
236
Units
A
A
1/7


SV1506FM 데이터시트, 핀배열, 회로
SV15..F
SURGE RATINGS
Symbol
Parameter
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
3.0 kA
45 x 103 A2s
- kA
- A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj Virtual junction temperature
Tstg Storage temperature range
- Mounting torque
Conditions
Mounting torque 15Nm
with mounting compound
dc
On-state (conducting)
Min. Max. Units
- 0.23 oC/W
- 0.02 oC/W
-
-55
12.0
150
200
15.0
oC
oC
Nm
CHARACTERISTICS
Symbol
Parameter
VFM Forward voltage
IRRM Peak reverse current
t
rr
Reverse recovery time
QRA1 Recovered charge (50% chord)
I Reverse recovery current
RM
K Soft factor
VTO
r
T
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 450A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 450A, diRR/dt = 10A/µs
Tcase = 125oC, VR = 100V
At T = 150oC
vj
At Tvj = 150oC
di/dt = 1000A/µs, Tj = 125oC
Typ. Max. Units
- 1.6 V
- 20 mA
- 3.2 µs
- 35 µC
- 21 A
---
- 1.0 V
- 1.33 m
- -V
2/7




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SV1506FM diode

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Fast Recovery Diode - Dynex Semiconductor



SV1506FM

Fast Recovery Diode - Dynex Semiconductor