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SS1020F 반도체 회로 부품 판매점

Schottky Diodes



Kexin 로고
Kexin
SS1020F 데이터시트, 핀배열, 회로
SMD Type
Schottky Diodes
SS1020F ~ SS10100F
Diodes
Features
Fast switching speed
Low power loss, high efficieucy
Surface mount package ideally suited for autonatic insertion
SOD-123F
Unit:mm
Cathode Band
Top View
2.8 ± 0.1
0.65 ± 0.1
3.7 ± 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol SS1020F SS1030F SS1040F SS1060F SS10100F Unit
Repetitive Peak Reverse Voltage
Reverse Breakdown Voltage @ IR =500μA
Reverse Voltage
Forward Voltage Ta=65
Averaged Forward Current.Ta=75
Peak Forward Surge Current @ t=8.3ms
Reverse Voltage Leakage Current
Typical Junction Capacitance
Junction Temperature
Storage Temperature
VRRM
VBR
VR
VF
IFAV
IFSM
IR
Cj
Tj
Tstg
20
30 40 60
0.55
60
1
30
500
125
-55 to 125
0.7
50
100
V
0.85
A
μA
40 pF
Marking
NO.
Marking
SS1020F SS1030F SS1040F SS1060F SS10100F
G2 G3 G4 G6 G10
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SS1020F 데이터시트, 핀배열, 회로
SMD Type
Diodes
Schottky Diodes
SS1020F ~ SS10100F
Typical Characterisitics
1
0.75
0.5
SINGLE PHASE HALF WAVE 60Hz
RESTSTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED
0.25 ON 0.2x0.2 (,, 5.0x5.0mm)
COPPER PAD AREAS
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE,OC
104
103
102
10
1
0.1
0
TJ 125 OC
TJ 75 OC
TJ 25 OC
20 40
REVERSE VOLTAGE,VR(V)
60
FIG. 1-FORWARD CURRENT DERATING CURVE
FIG. 2-TYPICAL REVERSE CHARACTERISTIC
1000
100
20 - 40V
60V
20
20-40V
10
60V
10 100V
TJ=25OC
0.1
0 10 20 30
VR,REVERSE VOLTAGE(VOLTS)
40
FIG.3 -TYPICAL JUNCTION CHATACTERISTIC
100V
1.0
TJ = 25 OC
PulseWidth= 300ms
1%Duty Cycle
0.1
.5 .7 .8 .9 1.1 1.3 1.5 1.7 1.9
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
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SS1020F diode

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