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BAV70T 반도체 회로 부품 판매점

Dual Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAV70T 데이터시트, 핀배열, 회로
BAV70T, NSVBAV70T
Dual Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR 100 Vdc
Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA
555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD
360 mW
2.9 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
345 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
www.onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
CASE 463
SOT−416/SC−75
2
1
STYLE 3
MARKING
DIAGRAM
A4 MG
G
1
A4 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
BAV70TT1G
Package
SOT−416
(Pb-Free)
Shipping
3000 / Tape &
Reel
NSVBAV70TT1G SOT−416
(Pb-Free)
3000 / Tape &
Reel
NSVBAV70TT3G SOT−416 10000 / Tape &
(Pb-Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1
Publication Order Number:
BAV70TT1/D


BAV70T 데이터시트, 핀배열, 회로
BAV70T, NSVBAV70T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
Reverse Voltage Leakage Current (Note 3)
(VR = 100 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 W, IR(REC) = 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
3. For each individual diode while the second diode is unbiased.
Symbol
V(BR)
IR
IR
CD
VF
trr
VRF
Min
100
Max
1.0
100
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
mAdc
nAdc
pF
mVdc
ns
V
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2




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