BAS16H 반도체 회로 부품 판매점
Switching Diode
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 ON Semiconductor |
BAS16H, SBAS16H
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
Non−Repetitive Peak Forward Surge
Current, 60 Hz
VR
IF
IFSM(surge)
100
200
500
Vdc
mAdc
mAdc
Repetitive Peak Forward Current
(Note 2)
IFRM 1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
IFSM
36.0
18.0
6.0
3.0
0.7
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.57 mW/°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
635
−55 to
150
°C/W
°C
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
http://onsemi.com
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
A6 M
A6 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16HT1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
SBAS16HT1G SOD−323 3000 /T ape & Reel
(Pb−Free)
SBAS16HT3G SOD−323 10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 11
1
Publication Order Number:
BAS16HT1/D
BAS16H, SBAS16H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 W)
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Min
−
−
−
100
−
−
−
−
−
−
−
−
Max
1.0
50
30
−
715
855
1000
1250
2.0
1.75
6.0
45
Unit
mAdc
Vdc
mV
pF
Vdc
ns
pC
http://onsemi.com
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BAS16H diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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