파트넘버.co.kr BAS16LT3G 데이터시트 PDF


BAS16LT3G 반도체 회로 부품 판매점

Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAS16LT3G 데이터시트, 핀배열, 회로
BAS16L, SBAS16L
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Non−Repetitive Peak Forward Surge
Current 60 Hz
VR
IF
IFSM(surge)
100
200
500
V
mA
mA
Repetitive Peak Forward Current
(Note 3)
IFRM 1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
IFSM
36.0
18.0
6.0
3.0
0.7
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
417
−55 to +150
°C/W
°C
http://onsemi.com
3
CATHODE
1
ANODE
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
A6 M G
G
1
A6 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAS16LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
BAS16LT3G
SOT−23 10000/Tape & Reel
(Pb−Free)
SBAS16LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
SBAS16LT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
Publication Order Number:
BAS16LT1/D


BAS16LT3G 데이터시트, 핀배열, 회로
BAS16L, SBAS16L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Min
100
Max
1.0
50
30
715
855
1000
1250
2.0
1.75
6.0
45
Unit
mAdc
Vdc
mV
pF
Vdc
ns
pC
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: ON Semiconductor

( onsemi )

BAS16LT3G diode

데이터시트 다운로드
:

[ BAS16LT3G.PDF ]

[ BAS16LT3G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BAS16LT3G

Switching Diode - ON Semiconductor