|
KIA |
KIAULTRAFAST FAST RECOVERY DIODE
8.0A,650V
SEMICONDUCTORS
15507595280
QQ 2880195519
1.Description
08TB70B
This series are state−of−the−art devices designed for use in switching power supplies,
inverters and as free wheeling diodes.
2. Features
Ultrafast 25 nanosecond recovery time
175°C operating junction temperature
Popular TO−220 package
Epoxy meets UL 94 V−0 @ 0.125 in
Low forward voltage
Low leakage current
High temperature glass passivated junction
Reverse voltage to 650 V
Pb−free packages are available
3. Mechanical Characteristics
Case: epoxy, molded
Weight: 1.9 grams (approximately)
Finish: all external surfaces corrosion resistant and terminal
Leads are readily solderable
Lead temperature for soldering purposes: 260°C max for 10 seconds
4. Pin configuration
Pin (TO220)
1
3
Pin(TO263)
1
2
3
Function
Cathode
Anode
Function
Cathode
Cathode
Anode
1 of 2
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
FAST RECOVERY DIODE
8.0A,650V
08TB70B
5. Maximum ratings
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
Total device, (Rated VR), TC = 150°C
Peak repetitive forward current
(Rated VR, square wave, 20 kHz), TC = 150°C
Nonrepetitive peak surge current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Operating junction temperature and storage
temperature range
Symbol
VRRM
VRW M
VR
IF(AV)
IFM
IFSM
TJ,Tstg
Rating
650
8.0
16
100
-65 to +175
Units
V
A
A
A
ºC
6. Thermal characteristics
Parameter
Maximum thermal resistance, junction−to−case
Symbol
RθJC
Rating
2.0
Unit
ºC/W
7. Electrical characteristics
Parameter
Symbol
Conditions
Maximum Instantaneous Forward Voltage
(Note 1)
VF
IF=8.0 A, TC=25°C
Maximum Instantaneous Reverse Current
(Note 1)
IR
rated DC voltage, TJ=150°C
rated DC voltage, TJ=25°C
Maximum Reverse Recovery Time
trr
IF=1.0 A, di/dt=50 A/μs
IF=0.5 A, IR=1.0 A, IREC=0.25 A
Note:1. Pulse test: pulse width = 300 μs, Duty cycle ≤ 2.0%.
Rating
1.8
500
10
30
25
Unit
V
μA
ns
2 of 2
Rev 1.1 JAN 2014
|