RB540VM-30 반도체 회로 부품 판매점
Schottky Barrier Diode
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 ROHM Semiconductor |
Schottky Barrier Diode
RB540VM-30
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
0.05
lLand Size Figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type
(UMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.7±0.2
0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-90/A
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
fφ1.15.55±0.005.05
UMD2
lStructure (1) Cathode
(2) Anode
0.3±0.1
1.40±0.1
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
4.0±0.1
fφ1.10.055
Conditions
1.0±0.1
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30
200
1000
150
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=10mA - - 0.45 V
IR
VR=10V
- - 0.5 mA
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A
RB540VM-30
lElectrical Characteristic Curves
Data Sheet
1000
100
Tj = 150°C
Tj = 125°C
10 Tj = 75°C
1
Tj = 25°C
0.1
0.01
0
Tj = -25°C
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10 Tj = 125°C
1 Tj = 75°C
0.1
0.01
0.001
0
Tj = 25°C
Tj = -25°C
10 20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
100 390
Tj = 25°C
f = 1MHz
385
380
Tj=25°C
IF=10mA
n=30pcs
375
370
10 365
Ave. : 349.1mV
360
355
350
1
0 5 10 15 20 25 30
345
340
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A
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제조업체: ROHM Semiconductor
( rohm )
RB540VM-30 diode
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[ RB540VM-30.PDF ]
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