파트넘버.co.kr G8605-21 데이터시트 PDF


G8605-21 반도체 회로 부품 판매점

InGaAs PIN photodiode



Hamamatsu Corporation 로고
Hamamatsu Corporation
G8605-21 데이터시트, 핀배열, 회로
PHOTODIODE
InGaAs PIN photodiode
G8605 series
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.
Features
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
Applications
l Optical power meter
l Water content analyzer
l Laser diode life test
s Specifications / Absolute maximum ratings
Type No.
D im ensional
outline/
W indow
Package
m aterial *
Cooling
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
/K
One-stage
TE-cooled
TO-8
/K
Two-stage
TE-cooled
Active
area
(mm)
φ1
φ2
φ3
φ5
φ1
φ2
φ3
φ5
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type A3179
l Heatsink for two-stage TE-cooled type A3179-01
l Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current VR Max. Topr
Tstg
(A) (V) (°C)
(°C)
5
1.5
5
5
2
5
-40 to +70 -55 to +85
1.0
5
5
2
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
M eas urem ent
condition
S
re
pectral
sponse
Peak
sensitivity
Element ran ge w avelength
temperature λ
λp
Photo
sensitivity
S
1.3 µ m λ=λp
(°C) (µm) (µm) (A /W ) (A /W )
-10 0.9 to 1.67
1.55 0.9 0.95
-20 0.9 to 1.65
Dark current
ID
VR=1 V
Typ. Max.
(nA) (nA)
0.07 0.35
0.3 1.5
15
2.5 12.5
0.03 0.15
0.15 0.75
0.5 2.5
1.2 6
Cut-off
frequency
fc
VR=1 V
RL=50
(MHz)
18
4
2
0.6
18
4
2
0.6
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D
λ=λp
NEP
λ=λp
(pF)
150
550
1000
3500
150
550
1000
3500
(M)
1500
300
100
30
3000
600
200
60
(cm ·H z1/2/W ) (W/Hz1/2)
5 × 10-15
2 × 1013
1 × 10-14
2 × 10-14
3 × 10-14
3 × 10-15
3 × 1013
7 × 10-15
1 × 10-14
2 × 10-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
1


G8605-21 데이터시트, 핀배열, 회로
s Spectral response
1
T=25 ˚C
T= -10 ˚C
T= -20 ˚C
0.5
(Typ.)
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
WAVELENGTH (µm)
KIRDB0184EA
Spectral response shifts towards the
short wavelength side when cooled.
One-stage TE-cooled type: λc=1.67 µm
Two-stage TE-cooled type: λc=1.65 µm
s Photo sensitivity linearity
(Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 , VR=0 V)
102
100 G8605-11/-21
98 G8605-12/-22
96
94 G8605-13/-23
G8605-15/-25
92
90
0 2 4 6 8 10 12 14 16
INCIDENT LIGHT LEVEL (mW)
KIRDB0241EA
InGaAs PIN photodiode G8605 series
s Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
2
1
0
-1
0.8
1.0 1.2 1.4 1.6
WAVELENGTH (µm)
1.8
KIRDB0042EA
s Dark current vs. reverse voltage
1 µA
G8605-15/-25
(Typ. Ta=25 ˚C)
100 nA
G8605-13/-23
10 nA
1 nA
100 pA
G8605-12/-22
G8605-11/-21
10 pA
0.01
0.1
1
10 100
REVERSE VOLTAGE (V)
KIRDB0242EA
Applying a reverse voltage increases
dark current, but improves frequency
characteristics and output linearity.
2




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G8605-21 diode

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