파트넘버.co.kr G8422-05 데이터시트 PDF


G8422-05 반도체 회로 부품 판매점

InGaAs PIN photodiode



Hamamatsu Corporation 로고
Hamamatsu Corporation
G8422-05 데이터시트, 핀배열, 회로
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
l Cut-off wavelength: 2.1 µm
l 3-pin TO-18 package: low price
l TE-cooled type TO-8 package: low dark current
l Active area: B0.3 to B3 mm
Applications
l Gas analyzer
l Water content analyzer
l NIR (Near Infrared) photometry
s Specifications / Absolute maximum ratings
Type No.
D im e n s io n a l
outline
Package
Cooling
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
TO-18
Non-cooled
TO-5
TO-8
One-stage
TE-cooled
TO-8
Two-stage
TE-cooled
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A) (V) (°C)
(°C)
--
-40 to +85 -55 to +125
1.5 2
0.2 -40 to +70 -55 to +85
1.0
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Element
Te m pe ra tu re
T
Spectral
response
range
λ
Peak Photo
sensitivity sensitivity
wavelength S
λp λ=λp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D
λ=λp
NEP
λ=λp
G8422-03
Typ. Max.
(°C)
(µm)
(µm)
(A/W) (nA) (nA) (MHz) (pF)
(M) (cm ·H z1/2/W ) (W/Hz1/2)
55 550 100
8
0.9
1.5 × 10-13
G8422-05
G8372-01
25 0.9 to 2.1
125 1250
500 5000
80
40
20
80
0.3
0.1
2.5
×
1011
2.5 × 10-13
4 × 10-13
G8372-03
5 (µA) 50 (µA) 3
800 0.01
1.5 × 10-12
G5852-103
G5852-11
5.5 55
100
-10 0.9 to 2.07 1.95
1.2
50 500
40
8
80
9 5 × 10-14
1 8 × 1011 1 × 10-13
G5852-13
500 5000
3
800 0.1
4 × 10-13
G5852-203
3 30 100
8
18
3 × 10-14
G5852-21
-20 0.9 to 2.05
25 250
40
80
2 1.2 × 1012 8 × 10-14
G5852-23
250 2500
3
800 0.2
3 × 10-13
1


G8422-05 데이터시트, 핀배열, 회로
InGaAs PIN photodiode G8422/G8372/G5852 series
s Spectral response
1.4
1.2
(Typ.)
T=25 ˚C
1.0
0.8
0.6
0.4
T= -20 ˚C
0.2
T= -10 ˚C
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
WAVELENGTH (µm)
KIRDB0226EA
s Photo sensitivity temperature characteristic
(Typ.)
2
1
0
-1
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
WAVELENGTH (µm)
KIRDB0207EA
s Dark current vs. reverse voltage
100 µA
Non-cooled type
(Typ. Ta=25 ˚C)
TE-cooled type
1 µA
(Typ.)
10 µA
G8372-03
100 nA
G5852-13 (T= -10 ˚C)
G5852-23 (T= -20 ˚C)
1 µA
G8372-01
100 nA
G8422-05
G8422-03
10 pA
0.01 0.1 1 10
REVERSE VOLTAGE (V)
KIRDB0235EA
s Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
10 pF
1 pF
0.01
G8422-05
G8422-03
G5852-103/-203
0.1 1
REVERSE VOLTAGE (V)
10
KIRDB0236EA
2
10 nA
1 nA
G5852-11 (T= -10 ˚C)
G5852-21 (T= -20 ˚C)
G5852-103 (T= -10 ˚C)
G5852-203 (T= -20 ˚C)
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0228EA
s Shunt resistance vs. element temperature
10 M
1 M
100 k
(Typ. VR=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
10 k
1 k
G8372-03
G5852-13/-23
100
-40 -20 0 20 40 60 80 90 100
ELEMENT TEMPERATURE (˚C)
KIRDB0237EA




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제조업체: Hamamatsu Corporation

( hamamatsu )

G8422-05 diode

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