파트넘버.co.kr G6849-01 데이터시트 PDF


G6849-01 반도체 회로 부품 판매점

InGaAs PIN photodiode



Hamamatsu Corporation 로고
Hamamatsu Corporation
G6849-01 데이터시트, 핀배열, 회로
InGaAs PIN photodiodes
G6849 series
Quadrant type
Features
Photosensitive area
G6849 : φ2 mm quadrant element
G6849-01: φ1 mm quadrant element
Low noise
High reliability
Applications
Light spot position detection
Measurement equipment
Structure
Parameter
Photosensitive area
Number of elements
Package
Window material
G6849
φ2/quadrant
4
TO-5
Borosilicate glass
G6849-01
φ1/quadrant
Unit
mm
-
-
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering condition
-
260 °C or less, within 10 s
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefcient of ID
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
ID
ΔTID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=1.55 μm
VR=1 V
VR=1 V
VR=1 V, RL=50 Ω
λ=1.3 μm, -3 dB
VR=1 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
Min.
-
-
0.8
0.85
-
-
15
-
10
1 × 1012
-
G6849
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.5
1.09
30
100
50
5 × 1012
2 × 10-14
Max.
-
-
-
-
5
-
-
160
-
-
6 × 10-14
Min.
-
-
0.8
0.85
-
-
G6849-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.15
1.09
Max.
-
-
-
-
1.5
-
Unit
μm
μm
A/W
nA
times/°C
80 120 - MHz
-
80
1 × 1012
-
25
200
5 × 1012
1 × 10-14
40
-
-
4 × 10-14
pF
MΩ
cm·Hz1/2/W
W/Hz1/2
The G6849 series may be damaged by Electro Static Discharge. Be carefull when using the G6849 series.
www.hamamatsu.com
1


G6849-01 데이터시트, 핀배열, 회로
InGaAs PIN photodiodes
G6849 series
Spectral response
1
(Typ. Ta=25 °C)
0.8
0.6
0.4
0.2
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Wavelength (µm)
KKIRDB0002EB
Photosensitivity temperature characteristics
2 (Typ. Ta=25 °C)
1
0
-1
0.8
1.0 1.2 1.4 1.6 1.8
Wavelength (µm)
KIRDB0042EA
Dark current vs. reverse voltage
1 µA
(Typ. Ta=25 °C)
100 nA
10 nA
1 nA
G6849
100 pA
10 pA
0.01
G6849-01
0.1 1 10
Reverse voltage (V)
100
KMIRB0016EC
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
1 nF
100 pF
G6849
10 pF
1 pF
0.01
G6849-01
0.1 1
Reverse voltage (V)
10
KMIRB0015EC
2




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G6849-01 diode

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InGaAs PIN photodiode - Hamamatsu Corporation